Senior Staff Engineer, RF Power Amplifier Design

Murata

. Lead development and technical evaluation of novel architectures, circuits, devices, and methods for high-performance RF power amplifiers and transmit chains using active/passive co-design and co-simulation .

Posted 10/20/2026full-timeArlington Heights • Illinois • United StatesSenior💰 $195,563 - $254,246 per yearWebsite

Core Competencies

Role fit

Core Competencies

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Demonstrates extensive expertise in RF power amplifier design, including hands-on experience with GaAs-based products and advanced development for mobile applications. Proficient in leading cross-functional teams, conducting design reviews, and driving product development from concept to high-volume production.

Highest-signal resume keywords

RF Power Amplifier DesignGaAs-Based Product DevelopmentEnvelope Tracking DesignTransistor-Level IC DesignCross-Functional Technical Leadership

ATS Keywords

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Applicant Tracking System Keywords

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Hard Skills

RF Power Amplifier OperationHigh-Frequency RFIC DesignEM ModelingAnalog Bias and Control CircuitsRF Measurement EquipmentIC Fabrication KnowledgeNonlinear Transistor EffectsDesign of Mobile Power AmplifiersDebugging and Optimizing RFICsProduct Lifecycle Management

Soft Skills

Technical LeadershipMentoringRisk AssessmentInfluencing Technical DecisionsDocumentation Clarity

Tools & Technologies

VirtuosoCadence SpectreKeysight ADSEM SoftwareMatlabJMP

Certifications & Qualifications

Master's Degree in Electrical Engineering

Industry Keywords

RF Front-End ApplicationsCellular StandardsWi-Fi StandardsPower Amplifier PlatformsProduct Performance Characterization

About the role

Key responsibilities & impact

Lead development and technical evaluation of novel architectures, circuits, devices, and methods for high-performance RF power amplifiers and transmit chains using active/passive co-design and co-simulation
Provide technical leadership for RF power amplifier platforms supporting cellular and Wi-Fi front-end applications
Conduct design reviews, architecture tradeoff decisions, and technical risk resolution across multiple programs
Drive power amplifier design across multiple process technologies and supply modulation approaches, including envelope tracking
Lead cross-functional collaboration with pSemi and Murata engineering teams on PA technologies
Partner with stakeholders and suppliers to execute the long-term PA platform architectural roadmap
Lead PA proof-of-concept prototypes and transition successful technologies into high-volume products
Advance pSemi and Murata RF PA capabilities, tools, technology, performance, cost optimization, and design methodologies
Mentor junior and peer engineers and review complex designs
Document product and design information and novel design techniques
Define, conduct, and analyze product performance characterization with Characterization and Test Engineers
Define, develop, and ramp production ATE solutions with Test Engineers
Provide technical leadership to resolve field failures, improve yield, drive corrective actions, and improve product robustness

Requirements

What you’ll need

Typically requires 12 or more years of RF FEM product development, depending on education level and experience
More than 5 years of direct experience with GaAs-based power amplifier product development
At least 5 years of advanced development experience directly related to mobile power amplifier and/or transmitter design
Detailed knowledge and experience with design of envelope tracking (ET) PA for mobile applications
Direct hands-on experience designing highly efficient and linear power amplifiers operating between 600 MHz and 20 GHz
Deep understanding of power amplifier operation and design principles
Experience with transistor-level IC design and layout across multiple technology nodes, including GaAs HBT, CMOS-SOI, SiGe, and GaN
Understanding of comparative advantages and tradeoffs between semiconductor processes
Good Wi-Fi and/or cellular standard system knowledge and key performance metrics
Knowledge of IC fabrication and its impact on circuit performance
Good understanding of nonlinear transistor effects
Knowledge of basic analog bias and control circuits and their impact on overall RF systems
Experience with EM modeling of high-frequency RFICs and PCBs
Familiarity with analog and RF IC layout techniques
Multiple successful IC tape-outs and contribution across the full product lifecycle from concept definition through validation, release, and production ramp
Experience designing, debugging, and optimizing RFICs in the lab using standard lab equipment
Hands-on use of RF measurement equipment to validate and correlate ACP/ACLR, EVM, IP3, NF, and gain
Proficiency with Virtuoso, Cadence Spectre, Keysight ADS, EM software, Matlab, and JMP
Strength in documentation clarity and completeness
Ability to assess and manage risk
Ability to influence cross-functional technical decisions and align stakeholders on complex tradeoffs
Recognized subject matter expertise in RF power amplifier design
Master’s degree in Electrical Engineering (or equivalent field)